Japan Semiconductor Innovation 50     (D-7 1970s)

NEC took an initiative in commercializing low noise GaAs MESFET, NE244, in 1974、and then Fujitsu commercialized world first high-power GaAs MESFET, FLX series, in 1976. Fujitsu then invented a new FET technology of AlGaAs-GaAs hetero-junction interface (HEMT=High Electron Mobility Transistor) in 1979.
These devices offered excellent performance in high frequency operations, and were widely used as the key devices in micro-wave and millimeter-wave communication systems in the world such as satellite broadcasting, mobile communication systems, etc. They also led the progress of compound semiconductor industry focusing on GaAs, as well as leading the communication industries in the world.

Remarks

To main gallery (Discrete Device 1970s)

Photo reference 1
"Submicron single-gate and dual-gate GaAs MESFETs with improved low noise and high gain performance" IEEE Trans. MTT, vol.MTT-24, pp. 300-305 (1976)

Photo reference 2
"GaAs Microwave Power FET" IEEE Trans. ED, vol. ED-23, pp. 388-394 (1976)